PART |
Description |
Maker |
EID1415A1-8 EID1415A1-8NH |
14.40-15.35GHz 8-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
LTC6947-15 |
Ultralow Noise 0.35GHz to 6GHz Fractional-N Synthesizer
|
Linear Technology
|
MAX9627ATC MAX9626ATC |
Low-Noise, Low-Distortion, 1.35GHz Fully Differential Amplifiers
|
Maxim Integrated Products
|
MGP20N40CL |
CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 SMARTDISCRETES Internally Clamped / N-Channel IGBT SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MGFS45V2123A |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.1-2.3 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFK38V2732 K382732 |
From old datasheet system 12.7~13.2GHZ BAND 6W INTERNALLY MATCHED GAAS FET 12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK35V4045 K354045 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 3W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V5258 C395258 |
5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 5.2~5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V3436 C393436 |
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V4450A C394450A |
From old datasheet system 4.4~5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET 4.4 - 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|